Design of a 30-40 GHz Low-Noise Amplifier in 45 nm SOI Technology

This article proposes a 30-40 GHz broadband low noise amplifier (LNA) with a minimum noise figure of 2.7 dB. The LNA consists of two differential cascode stages, using transformer-based matching network and cross-coupled capacitor neutralization topology to counteract the effects of C
gd
. The LNA is designed with 45 nm CMOS SOI technology, achieving a maximum gain of 20.2 dB, a 3-dB bandwidth of 10 GHz, a noise figure of less than 3.4 dB, and an input 1-dB compression point of −16.8 dBm.