25~32GHz Wideband Low Noise Amplifier using 0.15µm GaN-on-SiC Technology

Using 150 nm gallium nitride-on-silicon carbide (GaN-on-SiC) technology, a 25–32 GHz high-flatness wideband monolithic microwave integrated circuit low-noise amplifier is designed in this article. A four-stage common-source construction is chosen to suit the demands of high gain and low noise figure, and two LC series resonant branches are added to the interstage matching network to suppress the low-frequency gain, which enhances gain flatness in the wideband. The four-stage LNA's low NF of 2.31-2.59 dB, high gain of 20.5-21.4 dB, and gain flatness of 0.9 dB are its distinguishing features. Its chip area is 0.9× 3.1 mm
²
. Power amplifiers and RF transceiver switches can both be monolithically integrated with the proposed GaN-on-SiC LNA MMIC.