Design of Low Loss Radio Frequency Switch Device Based on Double-Channel InAlN/GaN HEMT

In this work, the effect of InAlN/GaN double heterojunction on the performance of RF switching devices has been investigated. Using InAlN material and introducing double heterojunction structure can optimize the insertion loss of switching devices by reducing the on-resistance. Compared with single-channel AlGaN/GaN HEMTs on SiC wafers, double-channel InAlN/GaN HEMTs on SiC wafers exhibit better saturation current density and lower on-resistance of the linear zone, which makes them better than the former at Sub 6GHz with 1dB insertion loss. InAlN epitaxial materials have a wide application prospect in the switching part of RF front-end receiver modules.