An Overview of Silicon Carbide MOSFETs Technology with Focus on Miller Effect Mitigation

This paper presents a thorough overview of silicon carbide (SiC) MOSFET technology. At first, a brief market survey is conducted, focusing on modern demanding applications. In addition, the switching characteristics of SiC MOSFETs are investigated in detail. The issue of parasitic turn-on, (i.e., Miller effect) is presented and analyzed. Parameters with significant impact and mitigation methods are discussed. Finally, a comparative evaluation of various discrete MOSFETs is performed on the LTspice
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simulation platform, regarding their performance during dv/dt transients.