Study on Interface Trap and Fixed Charge Generation under Channel Hot Carrier Stressing at Low Temperature Using Device Simulation

We investigated the degradation mechanism on nMOSFETs that is regarding the interface-state and the fixed charge generations at low temperature. The research of the mechanism is conducted to ensure effective and large-scale quantum computing and make space electronics cost-effective. In the paper, both of ΔD
it
and ΔD
fix
were demonstrated to be exponential degradation with stress time and the fixed charge generation is found to be a strong acceleration at lower temperature, suggesting that the degradation mechanism of MOSFETs at low temperature is different from that at room temperature.