Invited: Liquid-injection MOCVD-grown Ga2O3 on sapphire and 4H-SiC substrates: Material, transport, and MOSFET properties

Ga
2
O
3
is a promising ultra-wide bandgap (UWBG) semiconductor material for fabrication of high-power rectifiers and switching devices. This material, however, suffers from low lattice thermal conductivity, hampering the effective heat removal generated during the device on-state. A possible solution represents the hetero-epitaxial growth of Ga
2
O
3
thin films on highly-thermally-conductive substrates such as SiC. Here, we summarize our results of Ga
2
O
3
heteroepitaxy on 4H-SiC as well as sapphire substrates using liquid-injection MOCVD. First, structural and transport properties of Ga
2
O
3
films grown on sapphire substrate are presented. Then, structural properties of Ga
2
O
3
films grown on 4H-SiC substrate and processing and characterization of fabricated MOSFETs are reported.