Recent researches of GaN-based materials and devices in NU-AIST

NU-AIST is the cooperation site between Advanced Industrial Science and Technology (AIST) and Nagoya University, and its aim is bridging the gap between academic research and industry, and promoting research and developments on GaN and related compounds through all the stages from material science to their device applications. In this paper, our development of GaN-based epitaxial growth technologies, light emitting devices, and high-power electric devices and their switching circuit applications at a frequency of over MHz.