An RF Power Amplifier with MGTR and Capacitor Neutralization Technology in 22nm CMOS Process

This paper presents an RF power amplifier for wireless communication devices based on a 22nm CMOS process. The main circuit is designed based on a pseudo-differential cascode structure, which amplifies the differential-mode signal while improving the tolerance of the circuit. Multigated transistor (MGTR) technology is used to improve linearity and back-off efficiency while capacitor neutralization (CN) technique is employed to enhance the stability. Simulated results show that the saturation output power is 31.03dBm with power gain of 25.68 dB and peak power added efficiency (PAE) of 49.02%. Meanwhile, the PAE at 6dB/9dB/12dB power back-off point is obtained as 27.00%/17.22%/10.18%, and the output 1dB compression power is 29.72dBm.