Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition

Optoelectronic artificial synapses have a crucial role in future neuromorphic computing. In this study, a monolayer memristor that can be regulated both electrically and optically was fabricated using thermal atomic layer deposition (T-ALD) at temperature as low as 70 °C. The monolayer memristor has stable LRS/HRS cycles with low operating current and long retention times (10
⁴
s). By applying voltage pulses, repeatable potentiation and depression process are achieved, demonstrating the electrically simulated synaptic function. By using an ultraviolet (UV) light source with a wavelength of 365 nm, the memristor shows a stable light potentiation response, leading to multilevel cell characteristic (MLC). The synaptic properties under the photoelectric regulation are also demonstrated. This work may open up a new avenue for developing flexible opto-electronic artificial synapse.