A CMOS Dual Band Low-Loss High-Isolation Switch for 5G New Radio

This paper introduces the design of a dual band RF switch with low loss and high isolation using 40nm CMOS technology. The switch covers multiple frequency bands for millimeter wave 5G communication. Body floatation technology and parallel resonant network are used to improve the performance of the switch. The measured results show that the insertion loss is less than 1.6dB in the entire frequency band from 22GHz to 45GHz, and the insertion loss at 28GHz is 0.9dB. The isolation at 28GHz and 39GHz is -40dB and -51dB, respectively, and the isolation is greater than 25dB in the entire frequency band. The chip size of the switch is 0.3×0.4mm
²
, and the core area is only 0.05×0.1mm
²