EMI Mitigation for SiC MOSFET Power Modules Using Integrated Common-Mode Screen

Electromagnetic interference (EMI) remains a critical roadblock in fully benefiting from various advantages provided by wide-bandgap devices. In this work, SiC MOSFET power modules with integrated common-mode (CM) screens are fabricated and tested to better understand the impact of CM screen on EMI mitigation. Two module architectures with integrated CM screens connected to different DC nodes are fabricated and tested. Experimental results show that a CM screen connected to the midpoint of the dc bus reduces EMI input noise by up to 26 dB compared to a module architecture with no CM screen.