Thermal Control of SiC Module Based on the Feedback of Lifetime

The Silicon Carbide (SiC) module has been rated as one of the most promising power electronic devices due to its excellent performance in reducing power loss. However, the reliability of SiC module is seriously influenced by the thermal stress, and the thermal control has been proven as a cost-effective mean to reduce the thermal stress. This paper proposes a method to design the temperature control target of SiC module based on the feedback of lifetime. We show that the chosen temperature control target can optimize the thermal control. Case studies and experiments are given to demonstrate the performance of this method. Results show that the consumed lifetime of SiC module reduced by each thermal control is the maximum. Furthermore, the proposed strategy does not need to predict the junction temperature which makes the thermal control simple.