Design, Packaging, and Characterization of a 6.8kV/160A SiC SuperCascode Half-Bridge Module for Medium Voltage Applications

This paper introduces the design, packaging, and characterization of a 6.8kV/160A Austin SiC SuperCascode half-bridge power module for the first time. The module is based on the die-level package of four 1.7kV SiC JFET dies in each switch position. The proposed module exhibits ultra-low on-state resistance, excellent thermal handling capability, and reduced power loop parasitic inductance. Direct bonded copper (DBC) substrate is utilized to achieve excellent thermal performance as well as the high voltage insulation required for a 6.8 kV module. The static and dynamic performance of the module is analyzed experimentally.