Analysis of SiC MOSFETs Short-Circuit behavior in Half Bridge Configuration during Shoot-Through Event

This paper investigates the short-circuit behavior of SiC MOSFETs in half bridge configuration during shoot-through event. The short-circuit peak current (I
SCP
) as well as the distribution of drain to source voltage (V
DS
) of half bridge configuration are analyzed under various mismatch operating condition. Further, the determinants on total amount and distribution of short-circuit energy (SC energy) are obtained. It is revealed that the device with the lowest short-circuit current carrying capacity determines the I
SCP
and the total SC energy of half bridge leg. Besides, the decrease of active switch common source inductance can mitigate the V
DS
and SC energy imbalance caused by load current. The conclusions are validated by experimental results.