The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs

The authors report on a range of 10 kV SiC IGBTs that are being developed, deploying a novel retrograde p-base to maximise device ruggedness, thus minimizing the amount of derating required. These devices are being developed alongside a set of 10 kV SiC MOSFETs with the same active area splits, allowing for a thorough comparison between unipolar and bipolar device action at this voltage level. Initial results of blocking voltage and on-state measurements validate the front-side process and allow for exploration of the trade-offs. A significant reduction of specific on-resistance in measured IGBTs, compared to their MOSFET counterparts, could be demonstrated at this voltage level, along the blocking voltage ability.