High-Density High-Power Converter using 3.3-kV All-Silicon Carbide Modules

This work presents the development and validation of a high-power two-level converter using the latest 3.3 kV silicon carbide (SiC) module, in the 100 mm × 140 mm half-bridge package, aiming at high performance and high volumetric power density. The laminated busbar design together with the selection of the DC link capacitors are discussed, which leads to a compact busbar/capacitor assembly with low parasitic inductance in the current commutation loop. Switching test results are presented to show the low stray inductance. Thermal management is discussed to embody the superior performance of SiC modules versus state-of-the-art Si IGBT modules in terms of power density. Finally, the experimental results at 1800 V DC bus voltage with switching frequency sweeping are presented to verify the feasibility of the proposed design.