A Cooling Method and Investigation on Process of Interconnection for High-temperature SiC Applications

This paper investigates the performance of important factors in applications of silicon carbide (SiC) devices at high temperatures. Cooling and interconnection methods, two of the main factors that affect heat dissipation and reliability, are studied through simulations or experiments. For cooling method, a liquid metal with ceramic heatsink (LMwCH) cooling method is proposed and compared with water-cooled method. The simulation results of them on power die and power module reveal great advantages and potentials of LMwCH cooling method at high temperatures. For nano-silver sintering interconnection technology, the investigation of proper sintering temperature and time is conducted to enhance performance. The micro-patterns of the sintered nano-silver under different sintering processes are observed by scanning electron microscope (SEM), and the results are compared and analyzed.