TCAD Modeling of Temperature-Dependent Reverse Recovery Characteristics of 1.2-kV SiC MOSFETs’ Body Diode

The reverse recovery characteristics of 1.2-kV SiC MOSFETs’ body diode have been measured based on the hightemperature experimental platform in a wide range of 25 °C to 400 °C. In order to explore the physical mechanisms inside the device, 2D TCAD numerical simulations have been carried out and the device structure and physical models were calibrated. A new model of carrier lifetime that considers the sharp increase near 225 °C was developed. Simulation results verified that there are two reasons leading to the mutation phenomenon of reverse recovery characteristics at high temperature: 1) the temperature dependence of carrier lifetime and 2) the influence of traps in the P
⁺
shielding region. It was also observed that the capacitive charge dominates the reverse recovery charge from 25 °C to 275 °C and the drift charge shows more contributions from 325 °C to 400 °C.