Solution Processed n+ CdS/ n-CdTe/ Perovskite Heterojunction Thin-Film Solar Cells

Here we demonstrate Tec 10/n+ CdS/n-CdTe/perovskite/ Au device structure with two different perovskite hole transport layers (HTL) namely CsPbBr3 and CsPtI3. InCl
3
-doped electrodeposited CdTe shows low carrier concentration of
$3 \ \mathrm{x} \ 10^{15}\text{cm}^{-3}$
measured using electrochemical capacitance profiling.
${CsPbBr}_{3}$
and CsPtI3 exhibit a bandgap of 2.35 eV and 2.62 eV respectively and hole concentration on the order of 10
¹⁶
cm
^-3
. A device structure of chemical bath deposited CdS on Tec 10, In-doped CdTe, CsPbBr3 or CsPtI3 HTLs with Au contacts results in device efficiency of and 5.39% and 6.85% respectively. Future research includes CdTe grain boundary and interface passivation, and tailoring perovskite HTL bandgap, thickness, and passivation to enable ultra-thin bifacial CdTe solar cells.