Crosstalk Characteristics of Wireless Charging System Based on SiC MOSFET

SiC MOSFET-based wireless charging system is prone to produce crosstalk, which will affect the operation reliability. Firstly, the mechanism of crosstalk is modeled and the role of junction-capacitance in the crosstalk calculation is obtained. Then, the types of crosstalk in wireless charging system are discussed, and the influence of nonlinear junction-capacitance of SiC MOSFET on the crosstalk voltage is further analyzed. Finally, a 10kW wireless charging system bench is built for experimental verification. The results show that there is no positive crosstalk but only negative crosstalk in the SiC MOSFET, and the calculated value of the crosstalk voltage obtained by considering the nonlinear junction capacitance can more accurately characterize the experimental value.