From Si to MoS2 – Device Simulation Based on the Direct Solution of the Boltzmann Transport Equation

We extend the versatile and efficient Nano Device Simulator methodology developed for Si and Ge-based devices to enable simulation of TMD-based MOSFETs based on the direct solution of the Boltzmann transport equation. The methodology addresses the most important aspects of carrier transport within the semi-classical theoretical framework. Fully embedded in a TCAD environment, the presented approach allows to investigate a myriad of different TMD device architectures and concepts.