Multiphysics Modelling of Quantum-EM Transport in Ballistic Graphene Devices*

Ballistic graphene device modeling and design can be highly difficult since it requires a comprehensive quantum analysis at the nanoscale that is accurate enough to capture charge transport’s asymmetric behavior. In this work we present a multiphysics model based on Time-Dependent Schrödinger Equation (TDSE) which allows to model complex geometries, and, in particularly, 2D ballistic devices. The presented model is tested on a geometric diode structure, thus showing asymmetric charge/current quantum transport, depending on geometrical parameters, in particular with the gap size.