Self-Aligned Formation and Positioning of Nanogap Templates

This paper presents a versatile and scalable method for generating sub 20 nm nanogaps based on standard I-line lithography. The nanogaps are self-aligned to lithographically patterned features and make use of a combination of corner lithography, edge retraction, and sidewall oxidization. We demonstrate the flexibility of this approach by extending it to include coaxial holes in the center of the circular nanogaps, and by filling of the nanogaps with platinum silicide to create nanowires.