Analytical Model for Monolayer Phosphorene DG-FETs in the Ballistic Regime

This paper presents an analytical model for ballistic double-gate field-effect transistors (DG-FETs) based on monolayer phosphorene. Unlike other approaches, our formulation does not require an iterative solution nor uses special functions, making it well-suited for the design and analysis of integrated circuits. The obtained I-V curves are validated against numerical simulations, yielding excellent agreement.