A 3.6-4.5 GHz Doherty RF Power Amplifier Using $0.25-\mu \mathrm{m}$ GaN/SiC HEMT and GaAs IPD Technology

This paper introduces a Quasi-MMIC Doherty power amplifier operating in the 3.6-4.5 GHz frequency range. The power amplifier was manufactured using WIN™ Semiconductors'
$\mathbf{0.25}-\boldsymbol{\mu} \mathbf{m}$
Gallium Nitride/Silicon Carbide (GaN/SiC) technology and GaAs IPD technology. The GaN and GaAs IPD chips for the proposed power amplifier were assembled using Chip-on-Board wire-bond assembly technology. The power amplifier exhibited a gain of 18.5 dB, a 3-dB bandwidth from 3.6 GHz to 4.5 GHz, a saturation power of 38.4 dBm, and a peak power-added efficiency of 32.8%. In the context of a 5G NR FR1 256-QAM modulated signal with a 100-MHz bandwidth, the power amplifier demonstrated an average output power of 29.9 dBm under an error vector magnitude 3.5% limitation.