Refined Electrical Modelling of Power MOSFETs Based on Physical Information

The power metal-oxide-semiconductor field-effect transistor (MOSFET) is a critical device for power control and power conversion systems, the accurate calculation of static and dynamic behavior characteristics is an important prerequisite for system design optimization. The state-of-art modeling methods of power MOSFETs and their parasitic parameters focus on modeling and correction methods for the ontology. However, most of these methods are based on the design manual of MOSFETs, ignoring the influence of the manufacturing process on the behavior characteristics of MOSFETs, and the established static and dynamic behavior models have large deviations from the actual, which seriously affects the application of MOSFETs. To address this issue, this study proposes a physical information-based refined static and dynamic behavior modeling of the Power MOSFETs method. This paper completes the adjustment of the parameters of the power MOSFET model relying on physical information from real measurements. The static behavior is modelled through the voltage and current relationships under DC conditions. The dynamic behavior is modelled by the specific physical characteristics of the parasitic components. A double-pulse test circuit was built to test the device, and the results of the real measurements fit well with the simulation.