Thermal Simulation and Analysis of the SiC MOSFETs Based SSPC

Severe heat generation in power electronic devices is often the biggest culprit in harming their reliability. Our work analyses the heat loss composition and numerically calculates each component's loss for SiC MOSFETs, a vital heat-generating device in SSPCs. After that, we built a thermal simulation model of the whole SSPC in the finite element simulation software Ansys Icepak. After Considering the interactive effects of temperature and device heat generation, accurate steady-state thermal simulation results are obtained. The results obtained will contribute to the better design of reliability.