Evaluation of Cross-Contamination Risk during CMOS Devices Fabrication in an Industrial Silicon Wafer Processing

In the last decade, large-scale production of semiconductor device technologies and applications have been fabricated in a state-of-the-art fabrication facility. For instance, CMOS smart power device, discrete and Integrated Circuit (IC) products have been mass production in the fabrication foundry. However, these device applications have been processed in the same fabrication line which composed of ion implantation, wet chemical etching, lithography, and others. For instance, ion implantation process could lead to contamination from Arsenic element from implant residue which leads to early electrical breakdown of the device. In order to avoid cross contamination, the mixed fabrication process line of CMOS smart power device and other IC products is taken care and additional containment process is introduced before the high temperature step. The following study demonstrates cross contamination effect analysis on CMOS smart power device and the containment action in order to prevent cross contamination in the semiconductor mass production line.