MEMS Pressure Sensor Based on Piezoresistive Effect of MoS2 Film

Molybdenum disulfide (MoS
2
) has excellent electrical and mechanical properties and can be used as sensors. 2D MoS
2
is commonly used in sensors and is poorly compatible with MEMS. This paper found that the deposited vertical nanosheets of layered disulfide clamps have excellent piezoresistive properties, which can be prepared in large areas. Its piezoresistive mechanism is attributed to the fact that the tension or compression of the substrate with the stress of the substrate causes an increase or decrease in the spacing of the MoS
2
nanosheets between the layers, which results in a change in the resistance of the nanosheets between the layers. The piezoresistive factor of the MoS
2
film was about 3~5. The MEMS pressure sensor based on novel MoS
2
nanosheets was developed. The sensor showed a nonlinear error of 3.11%FS, a repeatability error of 1.75
^%
FS, a hysteresis error of 0.74
^%
FS, and basic accuracy of 3.64%FS.