A Soft Error Upset Recovery SRAM Cell for Aerospace and Military Applications

Space radiation particles causes malfunction in electric circuits. It is especially susceptible to memory-sensitive storage devices. When it affects data stored in the memory circuit, it causes disruption. Standard 6T SRAM is incapable of mitigating this disruption. Consequently, numerous authors presented various resilience strategies. However, a tradeoff exists between memory cell efficiency and soft error probability. This article describes a polar design soft error upset recovery SRAM memory cell (SUR-16T) that effectively recovers lost data due to a high-energy particle strike. SUR-16T has superior write stability, lower hold power dissipation, and shorter write access time at PVT variations compared to the mentioned memory cells. Furthermore, SUR-16T has a 0.96x/ 1.15x/ 1.10x/ 1.18x/ 1.02x/ 1.64x greater critical charge than SEA-14T/ RHBD-13T/ RHMC-12T/ QCCS-12T/ NRHC-14T/ HRRT-13T at 0.8V. In addition, the proposed memory cell demonstrated a higher relative figure of merit than existing memory cells.