A W-band Frequency Tripler in a 60 nm GaN HEMT Technology

In this work a W-band (75-110 GHz) frequency tripler using a 60 nm gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented. The 3-dB bandwidth is between 90-108 GHz, with a peak output power of 3 dBm. The suppression of unwanted harmonics is typically 20 dB, with a maximum of 30 dB over the frequency range. The frequency multiplier is designed to be used together with a power amplifier (PA) and a voltage controlled oscillator (VCO) to achieve an integrated high power signal source for high datarate communication and radar systems.