Characterization of trap-related transient-current effects in AlGaN/GaN nanochannels

This work explores transient-current effects associated with the capture and emission mechanisms of surface traps in AlGaN/GaN nanochannels at room temperature. The nanochannels have been fabricated by etching two isolating trenches and show a current-voltage characteristic influenced by the presence of surface charges. The conductance of these devices increases or decreases depending on the history of applied voltage, since it changes the occupation of the surface states and therefore the depletion region created by the sidewalls. Moreover, the lateral field effect plays an important role in these devices, because, in addition to promoting trap charging or discharging, modifies the depletion region around the trenches, both processes determining the conductance of the channel.