Simulation Challenges of SiC MOSFET Switching Performance and Reliability

This paper describes a holistic SiC MOSFET simulation flow with a focus on switching and reliability performance in the form of Short-Circuit validation. Several key physical aspects native to SiC MOSFETs are elucidated in TCAD simulations. A novel link between TCAD and SPICE is demonstrated. This link leads into a full SPICE model calibration simultaneously to typical power converter operating regions and Short-Circuit reliability.