Study of Self-Heating and its Effects in SOT-STT-MRAM

We fully couple magnetization, charge, spin, and temperature dynamics to study the switching of the combined spin-orbit torque (SOT) - spin-transfer torque (STT) magne-toresistive random access memory (MRAM). To account for the increased temperature, the material parameters are scaled. In comparison to the constant temperature model, our full model shows an incubation period due to the rising temperature, in agreement with experimental data. Furthermore, we demonstrate field-free switching of the SOT-STT MRAM cell and show that the incubation time can be minimized, when sufficiently high voltages are applied.