Simulation of a Capacitive MEMS Accelerometer Based on SOI Technology

The results of simulating a capacitive MEMS accelerometer based on SOI technology are investigated in this study, focusing on the stability against impact loads. The functional material for the sensing element was monocrystalline isotropic silicon with a crystallographic orientation of <100>. The following findings were discovered: a working acceleration measurement range of ±15g; mechanical sensitivity of the sensing element at 0.007 μm/g; capacitive sensitivity of the sensing element at 14 fF/g; resonance frequencies of 1632.2 Hz along the x-axis and 1522 Hz along the y-axis; total capacitance of the electrode sensing structure is 4.65 pF.