Photoluminescence of 1300 nm Range Strained InGaAs/InGaAlAs Superlattices

The work presents the results on the creation and investigation of their optical properties of several heterostructures based on short period strained superlattices which are differed in the compositions of the waveguide layer and the average indium molar fraction. It is shown that heterostructure with superlattice based on In
0.74
Ga
0.26
As/In
0.53
Al
0.25
Ga
0.22
As layers demonstrates the highest integral photoluminescence which is associated with the highest proportion of indium in the InGaAs layer and simultaneously with a high proportion of aluminum in the In
0.53
Al
0.25
Ga
0.22
As layer which leads to an increase in the effective potential barrier for charge carriers in superlattice.