Influence of Stimulated Near-IR Radiation on the Intensity of Terahertz Photoluminescence in GaAs/AlGaAs Quantum Wells

The parameters of a structure with tunnel-coupled GaAs/AlGaAs quantum wells designed to generate terahertz radiation during intersubband electron transitions under conditions of interband optical pumping are calculated and optimized. The dependences of the integral intensity of terahertz radiation on the pump level are experimentally obtained. The influence of interband stimulated radiation in the near infrared spectral range on the characteristics of radiation in the terahertz range is demonstrated.