An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors

Over the past few decades, a variety of nonlinear behavioral modeling techniques have been developed for microwave GaN power transistors in order to accurately capture their nonlinear behavior. Despite these efforts, there is still a lack of systematic studies on the comparisons and analyses of the performance of the various modeling techniques proposed over the years. An overview of these large-signal behavioral modeling approaches, including both traditional approximation methods and machine learning (ML) methods, is provided in this paper. In addition, in order to explain the basic theory and application areas of each behavioral model, prediction capabilities are also discussed.