Electrical Characteristics of Chalcogenide Doped with Silver as Active Layer in Memristive Devices

Memristive and electrical properties of silver doped As-S-Se chalcogenide were investigated. Synthesis of this material was performed by melt quenching in cascade regime of heating. The structural and morphological analysis was carried out using X-ray diffraction and a scanning electron microscope. The observed multiple semicircles in recorded impedance spectra were correlated with the microstructure of the synthesized chalcogenide. Analysis of current-voltage characteristics at room temperature indicated that As-S-Se chalcogenide doped with Ag possesses good bipolar resistive switching behavior which is necessary for the fabrication of the active layer in memristive devices.