Forward Bias Gate Leakage Mechanism in δ-doped β-(AlxGa1-x)2O3/Ga2O3 HFET

The forward bias gate leakage mechanisms in δ-doped β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
Heterostructure Field Effect Transistor has been studied using analytical model. At higher gate voltage, when the device is turned on, the gate leakage current is prominently driven by the thermionic emission phenomenon. However, at lower gate voltage, when the device is in off state, the gate leakage is driven by the trap-assisted tunneling phenomenon. The gate leakage current model is then validated with the experimental data. The study of gate leakage mechanism is essential to ascertain the device parameter in order to minimize the gate leakage current.