An Isolation-Improved Asymmetric T/R Switch with Two-Stage Networks in GaAs pHEMT for 5G NR FR2 n259 Band

The isolation of conventional asymmetric T/R switches is usually low, especially in the RX mode. To improve the isolation, an asymmetric T/R switch with two-stage networks used for both its TX and RX arms is proposed. The proposed T/R switch is designed for 5G NR FR2 n259 band and fabricated using WIN 0.15-µm GaAs pHEMT process. From 39.5 to 43.5 GHz, the measured TX-to-RX isolation is higher than 20.1 dB and 36.9 dB for the RX and TX modes, respectively.