Design of A D-Band SIW Bandpass Filter Using GaAs pHEMT Technology

A cross-coupling D-band substrate integrated waveguide (SIW) bandpass filter (BPF) using GaAs pHEMT technology is proposed. To improve out-of-band rejection performance, a transmission zero is introduced on the right side of the passband through the cross-coupling structure. The center frequency of the filter is 132GHz, the fractional bandwidth is 6.1%, the in-band insertion loss is 1.5dB, and the return loss is better than 20dB. Therefore, this high-performance D-band filter holds great potential for the future development of 6G communication systems.