A Novel Ka-band π-type 8-dB Attenuator Unit With Phase Compensation

In this paper, a novel Ka-band π-type 8-dB attenuator unit with phase compensation in 0.1-µm InGaAs pHEMT technology is presented. The introduced compensation structure reduces the phase advance of the attenuation state, hardly affects the phase lag of the reference state, and achieves the purpose of reducing the phase difference between the attenuation state and the reference state. The simulation results of the proposed attenuator unit exhibit low phase difference ( -3 ~ 1.5°) in 28-40 GHz. The amplitude error of the relative attenuation is within ± 0.2 dB, the insertion loss (IL) is 1.07-1.37 dB from 28 to 40 GHz, and the return loss (RL) of attenuation state is better than 15dB.