Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications

Three sub-100 nm metamorphic high electron mobility transistor (mHEMT) technologies have been developed for use in next-generation radar, communication and meteorological applications at millimeter wave and submillimeter wave frequencies. The advanced mHEMT technologies feature a gate-length of 50, 35 and 20 nm in combination with a high In-content
$\text{In}_{0.80}\text{Ga}_{0.20}\text{As}$
channel, thus enabling excellent extrinsic transit frequencies
${\it fi}$
up to 600 GHz and maximum oscillation frequencies
$fmm$
of more than 1 THz. Based on these technologies, we could successfully realize a variety of ultra-broadband state of the art low-noise and power amplifiers as well as multifunctional transmitter and receiver circuits, demonstrating very low noise figure (NF = 1.7 dB @ 75–110 GHz), high output power (Pout> 10 mW @ 75–305 GHz) and high small-signal gain (
$S_{21}=33\text{dB}$
@ 730 GHz).