Electrical Properties of $p-\text{CuNiO}_{2}/n-\text{Si}$ Heterojunction

The electrical properties of
$p-\text{CuNiO}_{2}/n$
-Si heterostructures fabricated by radio frequency magnetron sputtering of CuNiO
2
thin films on n-Si crystalline substrates were investigated. The mechanisms of current transfer are analyzed according to the temperature dependences of I-
$V$
-characteristics. The influence of light on the electrical properties of the
$p-\text{CuNiO}_{2}/n$
-Si heterostructure is determined.