Mobility enhance of graphene field effect transistors by organic compound washing

Due to its excellent properties, graphene attracts many researchers attention. Its single atomic layer properties, make graphene electrical properties are easily affected by surface impurities. In this paper, we studied the doping characteristic changes of the graphene by anhydrous ethanol and acetone cleaning. According to the electrical properties changes of the graphene transistor, we found both the two organic compound washing can reduce the p-type impurities on the graphene, increase the mobility of graphene transistors. The experimental phenomena are that the Dirac point voltage increased by 23 V and 8 V, and the maximum absolute transconductance increased 8.1 μS and 6.9 μS, respectively. This paper analyzes the cause of the experimental phenomena. This finding is helpful to graphene cleaning, improvement of graphene transistors reliability.