Nano-scale Quantum Modified SnTe/Pb0.98Sn0.02Te Supper lattice Structure Based Highly Sensitive Exotic p+-i-n+ IR Photo-detector

In this paper, asymmetrical super-lattice SnTe/Pb
0.98
Sn
0.02
Te exotic p
⁺
-i-n
⁺
nano-scale photo-sensor has been reported with significant improvement of photo-responsivity and quantum efficiency in the near infrared wavelength region. The photo-electric characteristics of the proposed Device-Under-Test (DUT) are studied by developing self consistent Non-linear Quantum Modified Drift-Diffusion (NQMDD) Model with appropriate boundary conditions. The proposed NQMDD model is validated by comparing the simulated results with the experimental results under a-like operating-conditions. An excellent agreement, in between the simulated and experimental results, under a-like operating-conditions, reveals the validity of the proposed NQMDD simulator. The performance of the DUT is enhanced by incorporation of alternate thick – SnTe and thin- Pb
0.98
Sn
0.02
Te layers into the active region of the device. The extensive study proves that the photo-electric characteristics of the DUT have improved significantly compared to its Si counterpart. To the best of authors’ knowledge this is the first report on asymmetrical super-lattice SnTe/Pb
0.98
Sn
0.02
Te exotic p
⁺
-i-n
⁺
nano-scale IR photo-sensor. The proposed DUT will play an important role for device-engineering for the development of highly sensitive circuits in defence and bio-medical industries.