A Comparative Analysis of Dissimilar High Electron Mobility Transistors and Applications

High Electron Mobility Transistors (HEMTs) are advanced semiconductor devices that have gained significant attention in recent years due to their exceptional performance in high-frequency and high-power applications. This comparative analysis investigates and compares the characteristics, material compositions, and applications of dissimilar HEMTs. The study focuses on two primary types of HEMTs: GaN HEMTs and InP HEMTs. Overall, this comparative analysis contributes to understanding dissimilar HEMTs and highlights their diverse applications, paving the way for advancements in high-performance semiconductor devices and enabling the development of innovative technologies in multiple industries.