Optimization of AlN deposition parameters for a high frequency 1D pMUT Array

Aluminium Nitride (AlN) thin films have gained attention due to their exceptional electric, thermal properties, making them suitable for various electronic and optoelectronic applications. RF magnetron sputtering is a widely used technique for depositing AlN thin films, offering precise control over deposition parameters. This paper presents the optimization of RF magnetron sputtering parameters for a piezoelectric AlN thin film growth. The influence of key parameters, including gas ratio, RF power, substrate temperature is investigated. The results: FWHM of 2.4° - 2.6° and a surface roughness of 1.4 nm highlight the significance of process optimization to achieve high-quality piezoelectric AlN thin films, paving the way for their utilization in advanced electronic devices.