Effect of Argon-oxygen Ratio on the Performance of AZTO Thin Film Transistors

In this paper, rare-element-free thin film transistors (AZTO-TFTs) were successfully fabricated with aluminum-zinc-tin oxide (AZTO) film preparing as the channel layer. The AZTO film was deposited by RF magnetron sputtering method. The effect of argon-oxygen ratio on the properties of AZTO thin films and electrical performance of AZTO-TFTs were studied. When the argon-oxygen ratio was 98:2, the transmittance of AZTO films could reach more than 90 % in the visible long-wave band, and the fabricated AZTOTFT exhibited excellent performance, including a field effect mobility $(\mu_{\mathrm{sat}})$ of $4.71\mathrm{~cm}^{2}/\mathrm{V}\cdot\mathrm{s}$, a subthreshold swing $(SS)$ of 0.37 $V/$ dec, a current on-to-off ratio $(\mathrm{I}_{\mathrm{on}}/\mathrm{I}_{\mathrm{off}})$ of $1.83\times 10^{8}$.